Onsemi - NIF9N05ACLT1G

NIF9N05ACLT1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NIF9N05ACLT1G
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.69 W; Minimum DS Breakdown Voltage: 52 V; Package Shape: RECTANGULAR;
Datasheet NIF9N05ACLT1G Datasheet
In Stock89
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 2.6 A
Maximum Pulsed Drain Current (IDM): 10 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 4
Maximum Power Dissipation (Abs): 1.69 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .125 ohm
Avalanche Energy Rating (EAS): 110 mJ
JEDEC-95 Code: TO-261AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 52 V
Additional Features: LOGIC LEVEL COMPATIBLE
Maximum Drain Current (Abs) (ID): 2.6 A
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