NIS6111QPT1 by Onsemi | Diodes

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Manufacturer	Onsemi
Manufacturer's Part Number	NIS6111QPT1
Description	RECTIFIER DIODE; Terminal Position: QUAD; Terminal Form: NO LEAD; No. of Terminals: 11; Surface Mount: YES; Package Shape: SQUARE;
Datasheet	NIS6111QPT1 Datasheet
In Stock	2,436

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Maximum Forward Voltage (VF):	1.2 V
Config:	COMPLEX
Diode Type:	RECTIFIER DIODE
Maximum Output Current:	30 A
Sub-Category:	Rectifier Diodes
Surface Mount:	YES
Terminal Finish:	Tin/Lead (Sn/Pb)
No. of Terminals:	11
Terminal Position:	QUAD
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	S-PQCC-N11
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Maximum Operating Temperature:	125 Cel
Moisture Sensitivity Level (MSL):	1
No. of Phases:	1
Maximum Repetitive Peak Reverse Voltage:	24 V
JESD-609 Code:	e0
Maximum Non Repetitive Peak Forward Current:	90 A
Diode Element Material:	SILICON
Qualification:	Not Qualified
Peak Reflow Temperature (C):	235
Application:	EFFICIENCY
Maximum Reverse Recovery Time:	.0365 us

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,436	$2.090	$5,091.240

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; IEC Conformity: NO; Mixed Contacts: NO; Empty Shell: NO;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 85 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;