Onsemi - NJL1302DG

NJL1302DG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NJL1302DG
Description PNP; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 15 A;
Datasheet NJL1302DG Datasheet
In Stock2,886
NAME DESCRIPTION
Nominal Transition Frequency (fT): 30 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 15 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 45
Terminal Finish: MATTE TIN
JESD-609 Code: e3
No. of Terminals: 5
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 200 W
Maximum Collector-Emitter Voltage: 260 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Additional Features: HIGH RELIABILITY
Maximum Operating Temperature: 150 Cel
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