NSS1C200T3G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NSS1C200T3G
Description	PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 2 A;
Datasheet	NSS1C200T3G Datasheet
In Stock	1,476

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	120 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	2 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	Other Transistors
Surface Mount:	YES
No. of Terminals:	4
Maximum Power Dissipation (Abs):	2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
JEDEC-95 Code:	TO-261AA
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	50
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	100 V
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,476	-	-

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