Onsemi - NSS20101JT1G

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NSS20101JT1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NSS20101JT1G
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 350 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): 1 A;
Datasheet NSS20101JT1G Datasheet
In Stock1,982
NAME DESCRIPTION
Nominal Transition Frequency (fT): 350 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): .3 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 100
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 20 V
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
1,982 $0.039 $77.298

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