Onsemi - NSS20201DMTTBG

NSS20201DMTTBG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NSS20201DMTTBG
Description NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 2.27 W; Maximum Collector Current (IC): 2 A;
Datasheet NSS20201DMTTBG Datasheet
In Stock1,883
NAME DESCRIPTION
Nominal Transition Frequency (fT): 180 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 2 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 6
Maximum Power Dissipation (Abs): 2.27 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N6
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Maximum Power Dissipation Ambient: 2.27 W
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 100
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 20 V
Maximum Collector-Base Capacitance: 10 pF
Peak Reflow Temperature (C): 260
Maximum VCEsat: .33 V
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Pricing (USD)

Qty. Unit Price Ext. Price
1,883 $1.020 $1,920.660

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