Onsemi - NSS60100DMTTBG

NSS60100DMTTBG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NSS60100DMTTBG
Description PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 155 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): 1 A;
Datasheet NSS60100DMTTBG Datasheet
In Stock613
NAME DESCRIPTION
Nominal Transition Frequency (fT): 155 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 6
Maximum Power Dissipation (Abs): 1.8 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N6
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 40
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 60 V
Maximum Collector-Base Capacitance: 18 pF
Peak Reflow Temperature (C): 260
Maximum VCEsat: .3 V
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Pricing (USD)

Qty. Unit Price Ext. Price
613 $0.201 $123.213

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