Onsemi - NSS60101DMR6T1G

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NSS60101DMR6T1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NSS60101DMR6T1G
Description NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .53 W; Maximum Collector Current (IC): 1 A;
Datasheet NSS60101DMR6T1G Datasheet
In Stock2,094
NAME DESCRIPTION
Nominal Transition Frequency (fT): 200 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Surface Mount: YES
No. of Terminals: 6
Maximum Power Dissipation (Abs): .53 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: .53 W
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 100
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 60 V
Maximum Collector-Base Capacitance: 8 pF
Peak Reflow Temperature (C): 260
Maximum VCEsat: .2 V
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