NSS60101DMR6T2G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NSS60101DMR6T2G
Description	NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .53 W; Maximum Collector Current (IC): 1 A;
Datasheet	NSS60101DMR6T2G Datasheet
In Stock	1,381

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	200 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	1 A
Configuration:	SEPARATE, 2 ELEMENTS
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Polarity or Channel Type:	NPN
Surface Mount:	YES
Minimum DC Current Gain (hFE):	100
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	6
Maximum Power Dissipation (Abs):	.53 W
Maximum Collector-Emitter Voltage:	60 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Maximum Collector-Base Capacitance:	8 pF
Maximum VCEsat:	.2 V
Maximum Power Dissipation Ambient:	.53 W

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,381	-	-

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