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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NSS60200DMTTBG |
| Description | PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 155 MHz; Maximum Power Dissipation (Abs): 2.27 W; Maximum Collector Current (IC): 2 A; |
| Datasheet | NSS60200DMTTBG Datasheet |
| In Stock | 2,065 |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 155 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 2 A |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SEPARATE, 2 ELEMENTS |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 6 |
| Maximum Power Dissipation (Abs): | 2.27 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | S-PDSO-N6 |
| No. of Elements: | 2 |
| Package Shape: | SQUARE |
| Terminal Form: | NO LEAD |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | COLLECTOR |
| Maximum Power Dissipation Ambient: | 1.8 W |
| Moisture Sensitivity Level (MSL): | 1 |
| Polarity or Channel Type: | PNP |
| Minimum DC Current Gain (hFE): | 40 |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Maximum Collector-Emitter Voltage: | 60 V |
| Maximum Collector-Base Capacitance: | 18 pF |
| Peak Reflow Temperature (C): | 260 |
| Maximum VCEsat: | .45 V |
