Onsemi - NST1009XV6T5

NST1009XV6T5 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NST1009XV6T5
Description NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;
Datasheet NST1009XV6T5 Datasheet
In Stock2,266
NAME DESCRIPTION
Nominal Transition Frequency (fT): 180 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN AND PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 120
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 6
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .5 W
Maximum Collector-Emitter Voltage: 60 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Maximum Operating Temperature: 150 Cel
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