Onsemi - NST1602CLTWG

  1. Home
  2. Onsemi - NST1602CLTWG
NST1602CLTWG by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number NST1602CLTWG
Description Power Bipolar Transistors;
Datasheet NST1602CLTWG Datasheet
In Stock1,553
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,553 - -

Popular Products

Category Top Products

TIP110 by Rectron

TIP110

Rectron

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;
BD679A by Comset Semiconductors

BD679A

Comset Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): .06 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
2STN2540 by STMicroelectronics

2STN2540

STMicroelectronics

2STN2540 by STMicroelectronics is a PNP BJT transistor with 40V VCEO, 5A IC, and 1.6W power dissipation. Ideal for switching applications in small outline packages, it operates up to 150°C with a min hFE of 50.
BD140-16 by SPC TECHNOLOGY/ MULTICOMP

BD140-16

SPC TECHNOLOGY/ MULTICOMP

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Minimum DC Current Gain (hFE): 100; Terminal Form: THROUGH-HOLE;
MJ15016G by Onsemi

MJ15016G

Onsemi

The Onsemi MJ15016G is a PNP BJT transistor with max. collector-emitter voltage of 120V, max. collector current of 15A, and max. power dissipation of 180W. It is commonly used for switching applications due to its single configuration and high transition frequency of 2.2MHz.
TIP110 by Texas Instruments

TIP110

Texas Instruments

TIP110 by Texas Instruments is a NPN Darlington BJT transistor with 500 min hFE. It has a max power dissipation of 50W and can handle up to 60V collector-emitter voltage. Ideal for applications requiring high current gain and power dissipation in through-hole mounting configurations.
MJD45H11T4 by Onsemi

MJD45H11T4

Onsemi

The Onsemi MJD45H11T4 is a PNP BJT transistor with 80V VCEO, 8A IC, and 20W power dissipation. Ideal for switching applications, it features a small outline package, Gull Wing terminals, and operates up to 140°C.
TIP125 by NXP Semiconductors

TIP125

NXP Semiconductors

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Maximum Collector-Emitter Voltage: 60 V; No. of Elements: 1;
D44H8 by Fairchild Semiconductor

D44H8

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 8 A;
TIP42C by Comset Semiconductors

TIP42C

Comset Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP147 by Continental Device India

TIP147

Continental Device India

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Maximum Operating Temperature: 150 Cel;
BD679A by STMicroelectronics

BD679A

STMicroelectronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
BD679AS by Fairchild Semiconductor

BD679AS

Fairchild Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
FZT851TA by Diodes Incorporated

FZT851TA

Diodes Incorporated

FZT851TA by Diodes Inc. is a NPN BJT transistor with 60V VCEO, 6A IC, and 3W Ptot. Ideal for switching applications, it has hFE of min. 100 and fT of 130MHz. Its small outline package makes it suitable for surface mount designs in various electronic devices.
MJE340G by Onsemi

MJE340G

Onsemi

MJE340G by Onsemi is a NPN BJT with 300V VCEO, 20W Ptot, and hFE of 30. Ideal for power applications due to its high voltage rating and low collector current. Its single configuration and through-hole terminals make it suitable for various electronic designs.
TIP31C by Diotec Semiconductor Ag

TIP31C

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 3 A; Package Body Material: PLASTIC/EPOXY;
TIP41C by Central Semiconductor

TIP41C

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BD1396STU by Onsemi

BD1396STU

Onsemi

BD1396STU by Onsemi is a NPN BJT transistor with 80V VCEO, 1.5A IC, and 13W Ptot. Ideal for switching applications, it has a min hFE of 40 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.
TIP112 by Inchange Semiconductor

TIP112

Inchange Semiconductor

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Transistor Element Material: SILICON;
PZT2222A by Diotec Semiconductor Ag

PZT2222A

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 600 A; Transistor Application: SWITCHING;