Onsemi - NST857AMX2T5G

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NST857AMX2T5G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NST857AMX2T5G
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
Datasheet NST857AMX2T5G Datasheet
In Stock1,429
NAME DESCRIPTION
Nominal Transition Frequency (fT): 100 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Surface Mount: YES
No. of Terminals: 3
Maximum Power Dissipation (Abs): .3 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-PBCC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Maximum Power Dissipation Ambient: .3 W
Other Names: 488-NST857AMX2T5GTR
488-NST857AMX2T5GCT
488-NST857AMX2T5GDKR
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 125
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 45 V
Maximum Collector-Base Capacitance: 4.5 pF
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: .65 V
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Pricing (USD)

Qty. Unit Price Ext. Price
1,429 $0.044 $62.876

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