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Manufacturer | Onsemi |
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Manufacturer's Part Number | NST857BMX2T5G |
Description | PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; |
Datasheet | NST857BMX2T5G Datasheet |
In Stock | 1,083 |
NAME | DESCRIPTION |
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Nominal Transition Frequency (fT): | 100 MHz |
Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | .1 A |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Surface Mount: | YES |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | .3 W |
Terminal Position: | BOTTOM |
Package Style (Meter): | CHIP CARRIER |
JESD-30 Code: | R-PBCC-N3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | NO LEAD |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | COLLECTOR |
Maximum Power Dissipation Ambient: | .3 W |
Polarity or Channel Type: | PNP |
Minimum DC Current Gain (hFE): | 220 |
Minimum Operating Temperature: | -55 Cel |
Maximum Collector-Emitter Voltage: | 45 V |
Maximum Collector-Base Capacitance: | 4.5 pF |
Peak Reflow Temperature (C): | NOT SPECIFIED |
Maximum VCEsat: | .65 V |