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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NSTB60BDW1T1 |
| Description | NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .15 A; |
| Datasheet | NSTB60BDW1T1 Datasheet |
| In Stock | 2,123 |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 140 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .15 A |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
| Transistor Element Material: | SILICON |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | TIN LEAD |
| No. of Terminals: | 6 |
| Maximum Power Dissipation (Abs): | .25 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G6 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Moisture Sensitivity Level (MSL): | 1 |
| Polarity or Channel Type: | NPN AND PNP |
| Minimum DC Current Gain (hFE): | 80 |
| JESD-609 Code: | e0 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 50 V |
| Additional Features: | BUILT IN BIAS RESISTOR RATIO IS 2.13 |
| Peak Reflow Temperature (C): | 235 |
