Onsemi - NSV40301MZ4T1G

MJD127T4G by Onsemi is a PNP BJT with Darlington configuration, ideal for switching applications. It features a max collector-emitter voltage of 100V, collector current of 8A, and power dissipation of 20W. With a transition frequency of 4MHz, it operates b/w -65 to 150°C making it suitable for various power control circuits.

NPN; Configuration: SINGLE; Maximum Collector Current (IC): 5 A; No. of Elements: 1; Maximum Collector-Emitter Voltage: 100 V; Minimum DC Current Gain (hFE): 1000;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 30; Terminal Form: GULL WING;

TIP47 by Samsung is a NPN power bipolar junction transistor with a maximum power dissipation of 40W and a maximum operating temperature of 150 °C. It has a maximum collector-emitter voltage of 250V and a maximum collector current of 1A. This transistor is designed for switching applications and has a minimum DC current gain of 10. Its package style is TO-220AB with a rectangular shape and through-hole terminal form.

Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Maximum Collector-Emitter Voltage: 80 V; Terminal Form: THROUGH-HOLE;

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Maximum Operating Temperature: 150 Cel;

Power Bipolar Transistors;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 6 A; No. of Terminals: 3;

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Collector Current (IC): 15 A; Maximum Collector-Emitter Voltage: 60 V; Transistor Element Material: SILICON;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;

NPN; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Package Style (Meter): FLANGE MOUNT; Terminal Position: SINGLE; Maximum Collector-Emitter Voltage: 80 V;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Collector Current (IC): 15 A; Transistor Application: SWITCHING;

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Package Style (Meter): FLANGE MOUNT;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;

Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Terminal Position: SINGLE;

TIP35C by Texas Instruments is a NPN BJT transistor with 100V VCEO, 25A IC, and 125W Ptot. Ideal for switching applications due to its high power dissipation capability. Features single configuration in a rectangular package suitable for flange mount installations.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;

Power Bipolar Transistors; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;