Onsemi - NSVB1706DMW5T1G

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NSVB1706DMW5T1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NSVB1706DMW5T1G
Description NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .385 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Minimum DC Current Gain (hFE): 80;
Datasheet NSVB1706DMW5T1G Datasheet
In Stock769
NAME DESCRIPTION
Other Names: 488-NSVB1706DMW5T1GCT
488-NSVB1706DMW5T1GTR
488-NSVB1706DMW5T1GDKR
NSVB1706DMW5T1G-ND
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): 30
Transistor Element Material: SILICON
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 80
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): .385 W
No. of Elements: 2
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
769 $0.141 $108.429

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