Image shown is a representation only.
| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NSVBAS16W1T1G |
| Description | RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR; |
| Datasheet | NSVBAS16W1T1G Datasheet |
| In Stock | 2,043 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Maximum Forward Voltage (VF): | 1.2 V |
| Config: | SEPARATE, 3 ELEMENTS |
| Diode Type: | RECTIFIER DIODE |
| Maximum Output Current: | .2 A |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| Maximum Reverse Current: | 1 uA |
| No. of Terminals: | 6 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G6 |
| Minimum Breakdown Voltage: | 100 V |
| No. of Elements: | 3 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 150 Cel |
| Moisture Sensitivity Level (MSL): | 1 |
| No. of Phases: | 1 |
| Reverse Test Voltage: | 100 V |
| Maximum Repetitive Peak Reverse Voltage: | 100 V |
| JESD-609 Code: | e3 |
| Maximum Non Repetitive Peak Forward Current: | 1 A |
| Diode Element Material: | SILICON |
| Maximum Power Dissipation: | .3 W |
| Reference Standard: | AEC-Q101 |
| Peak Reflow Temperature (C): | 260 |
| Application: | GENERAL PURPOSE |
| Maximum Reverse Recovery Time: | .003 us |
