NSVBC124XDXV6T1G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NSVBC124XDXV6T1G
Description	NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Reference Standard: AEC-Q101; Moisture Sensitivity Level (MSL): 1;
Datasheet	NSVBC124XDXV6T1G Datasheet
In Stock	1,579

NAME	DESCRIPTION
Other Names:	NSVBC124XDXV6T1G-ND 488-NSVBC124XDXV6T1GDKR 488-NSVBC124XDXV6T1GTR 488-NSVBC124XDXV6T1GCT 2832-NSVBC124XDXV6T1GTR 2832-NSVBC124XDXV6T1G-488
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.1 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material:	SILICON
Polarity or Channel Type:	NPN
Surface Mount:	YES
Minimum DC Current Gain (hFE):	80
No. of Terminals:	6
Maximum Collector-Emitter Voltage:	50 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Additional Features:	BUILT IN BIAS RESISTANCE RATIO IS 2.14
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	260
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,579	$0.100	$157.900

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; No. of Elements: 8; Minimum DC Current Gain (hFE): 1000;

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