Onsemi - NSVBC124XPDXV6T1G

NSVBC124XPDXV6T1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NSVBC124XPDXV6T1G
Description NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A; Reference Standard: AEC-Q101;
Datasheet NSVBC124XPDXV6T1G Datasheet
In Stock1,936
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 6
Maximum Power Dissipation (Abs): .5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN AND PNP
Minimum DC Current Gain (hFE): 80
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 50 V
Additional Features: BUILT IN BIAS RESISTOR RATIO IS 0.47
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
Maximum VCEsat: .25 V
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Pricing (USD)

Qty. Unit Price Ext. Price
1,936 $0.059 $114.224

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