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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NSVBC144EPDXV6T1G |
| Description | NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; |
| Datasheet | NSVBC144EPDXV6T1G Datasheet |
| In Stock | 117 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .1 A |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
| Transistor Element Material: | SILICON |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 6 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-F6 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Maximum Operating Temperature: | 150 Cel |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: |
ONSONSNSVBC144EPDXV6T1G 488-NSVBC144EPDXV6T1GTR NSVBC144EPDXV6T1G-ND 488-NSVBC144EPDXV6T1GCT 2156-NSVBC144EPDXV6T1G-OS 488-NSVBC144EPDXV6T1GDKR |
| Polarity or Channel Type: | NPN AND PNP |
| Minimum DC Current Gain (hFE): | 80 |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Maximum Collector-Emitter Voltage: | 50 V |
| Additional Features: | BUILT IN BIAS RESISTANCE RATIO IS 1 |
| Reference Standard: | AEC-Q101 |
| Peak Reflow Temperature (C): | 260 |









