Onsemi - NSVBCH807-16LT1G

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NSVBCH807-16LT1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NSVBCH807-16LT1G
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
Datasheet NSVBCH807-16LT1G Datasheet
In Stock1,398
NAME DESCRIPTION
Nominal Transition Frequency (fT): 100 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .5 A
Configuration: SINGLE
Transistor Element Material: SILICON
JEDEC-95 Code: TO-236
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 100
Minimum Operating Temperature: -55 Cel
No. of Terminals: 3
Maximum Power Dissipation (Abs): .3 W
Maximum Collector-Emitter Voltage: 45 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 175 Cel
Reference Standard: AEC-Q101
Maximum VCEsat: .7 V
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