NSVDTA114EET1G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NSVDTA114EET1G
Description	PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Finish: Matte Tin (Sn) - annealed;
Datasheet	NSVDTA114EET1G Datasheet
In Stock	2,308

NAME	DESCRIPTION
Other Names:	488-NSVDTA114EET1GDKR 488-NSVDTA114EET1GCT NSVDTA114EET1G-ND ONSONSNSVDTA114EET1G 2156-NSVDTA114EET1G-OS 488-NSVDTA114EET1GTR
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.1 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Polarity or Channel Type:	PNP
Surface Mount:	YES
Minimum DC Current Gain (hFE):	35
Terminal Finish:	Matte Tin (Sn) - annealed
JESD-609 Code:	e3
No. of Terminals:	3
Maximum Collector-Emitter Voltage:	50 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Additional Features:	BUILT IN BIAS RESISTANCE RATIO IS 1
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	NOT SPECIFIED
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,308	$0.025	$57.700

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