NSVDTA114EM3T5G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NSVDTA114EM3T5G
Description	PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Additional Features: BUILT IN BIAS RESISTANCE RATIO IS 1; Minimum DC Current Gain (hFE): 35;
Datasheet	NSVDTA114EM3T5G Datasheet
In Stock	1,312

NAME	DESCRIPTION
Other Names:	488-NSVDTA114EM3T5GTR 488-NSVDTA114EM3T5GCT 488-NSVDTA114EM3T5GDKR 2832-NSVDTA114EM3T5GTR NSVDTA114EM3T5G-ND
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.1 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Polarity or Channel Type:	PNP
Surface Mount:	YES
Minimum DC Current Gain (hFE):	35
Terminal Finish:	Matte Tin (Sn) - annealed
JESD-609 Code:	e3
No. of Terminals:	3
Maximum Collector-Emitter Voltage:	50 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Additional Features:	BUILT IN BIAS RESISTANCE RATIO IS 1
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	NOT SPECIFIED
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,312	$0.190	$249.280

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