Image shown is a representation only.
| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NSVDTC123JM3T5G |
| Description | NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e3; |
| Datasheet | NSVDTC123JM3T5G Datasheet |
| In Stock | 1,655 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
NSVDTC123JM3T5G-ND 488-NSVDTC123JM3T5GDKR 488-NSVDTC123JM3T5GTR 488-NSVDTC123JM3T5GCT |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .1 A |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN RESISTOR |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Polarity or Channel Type: | NPN |
| Surface Mount: | YES |
| Minimum DC Current Gain (hFE): | 80 |
| Terminal Finish: | Matte Tin (Sn) - annealed |
| JESD-609 Code: | e3 |
| No. of Terminals: | 3 |
| Maximum Collector-Emitter Voltage: | 50 V |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-F3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Additional Features: | BUILT IN BIAS RESISTANCE RATIO IS 21 |
| Reference Standard: | AEC-Q101 |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Moisture Sensitivity Level (MSL): | 1 |









