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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NSVEMC2DXV5T1G |
| Description | NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; |
| Datasheet | NSVEMC2DXV5T1G Datasheet |
| In Stock | 1,058 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
NSVEMC2DXV5T1GOSDKR ONSONSNSVEMC2DXV5T1G NSVEMC2DXV5T1G-ND NSVEMC2DXV5T1GOSCT NSVEMC2DXV5T1GOSTR 2156-NSVEMC2DXV5T1G-OS |
| Maximum Collector Current (IC): | .1 A |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Transistor Element Material: | SILICON |
| Sub-Category: | BIP General Purpose Small Signal |
| Polarity or Channel Type: | NPN AND PNP |
| Surface Mount: | YES |
| Minimum DC Current Gain (hFE): | 60 |
| Terminal Finish: | TIN |
| JESD-609 Code: | e3 |
| Maximum Power Dissipation (Abs): | .5 W |
| No. of Elements: | 2 |
| Peak Reflow Temperature (C): | 260 |
| Moisture Sensitivity Level (MSL): | 1 |









