Onsemi - NSVEMD4DXV6T5G

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NSVEMD4DXV6T5G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NSVEMD4DXV6T5G
Description NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 80;
Datasheet NSVEMD4DXV6T5G Datasheet
In Stock91,982
NAME DESCRIPTION
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): 30
Transistor Element Material: SILICON
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN AND PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 80
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): .5 W
No. of Elements: 2
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

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