Onsemi - NSVEMT1DXV6T5G

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NSVEMT1DXV6T5G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NSVEMT1DXV6T5G
Description PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;
Datasheet NSVEMT1DXV6T5G Datasheet
In Stock681
NAME DESCRIPTION
Nominal Transition Frequency (fT): 140 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 6
Maximum Power Dissipation (Abs): .5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Other Names: 2156-NSVEMT1DXV6T5G-OS
ONSONSNSVEMT1DXV6T5G
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 120
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 50 V
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
Maximum VCEsat: .5 V
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