Onsemi - NSVIMD10AMT1G

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NSVIMD10AMT1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NSVIMD10AMT1G
Description NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .285 W; Maximum Collector Current (IC): .5 A; Peak Reflow Temperature (C): 260;
Datasheet NSVIMD10AMT1G Datasheet
In Stock11,444
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .5 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Polarity or Channel Type: NPN AND PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 100
Terminal Finish: MATTE TIN
JESD-609 Code: e3
No. of Terminals: 6
Maximum Power Dissipation (Abs): .285 W
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
Maximum VCEsat: .3 V
Moisture Sensitivity Level (MSL): 1
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