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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NSVMMBT5401M3T5G |
| Description | PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): .13 W; Maximum Collector Current (IC): .06 A; |
| Datasheet | NSVMMBT5401M3T5G Datasheet |
| In Stock | 75,150 |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 180 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .06 A |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | .13 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-F3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Maximum Operating Temperature: | 150 Cel |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: |
NSVMMBT5401M3T5G-ND 2832-NSVMMBT5401M3T5GTR 488-NSVMMBT5401M3T5GDKR 488-NSVMMBT5401M3T5GTR 488-NSVMMBT5401M3T5GCT |
| Polarity or Channel Type: | PNP |
| Minimum DC Current Gain (hFE): | 20 |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Maximum Collector-Emitter Voltage: | 150 V |
| Maximum Collector-Base Capacitance: | 6 pF |
| Reference Standard: | AEC-Q101 |
| Peak Reflow Temperature (C): | 260 |
| Maximum VCEsat: | .6 V |
