Onsemi - NSVMMUN2112LT1G

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NSVMMUN2112LT1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NSVMMUN2112LT1G
Description PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Terminal Finish: MATTE TIN;
Datasheet NSVMMUN2112LT1G Datasheet
In Stock159,207
NAME DESCRIPTION
Other Names: NSVMMUN2112LT1GOSTR
NSVMMUN2112LT1G-ND
NSVMMUN2112LT1GOSCT
NSVMMUN2112LT1GOSDKR
2832-NSVMMUN2112LT1GTR
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): 30
Transistor Element Material: SILICON
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 60
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): .4 W
No. of Elements: 1
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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