Onsemi - NSVMUN2112T1G

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NSVMUN2112T1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NSVMUN2112T1G
Description PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .338 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260; Transistor Element Material: SILICON;
Datasheet NSVMUN2112T1G Datasheet
In Stock122
NAME DESCRIPTION
Other Names: 2156-NSVMUN2112T1G-OS
2832-NSVMUN2112T1GTR
ONSONSNSVMUN2112T1G
2832-NSVMUN2112T1G-488
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): 30
Transistor Element Material: SILICON
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 60
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): .338 W
No. of Elements: 1
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
122 $0.025 $3.050

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