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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NSVMUN5132T1G |
| Description | PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A; JESD-609 Code: e3; Maximum Collector-Emitter Voltage: 50 V; |
| Datasheet | NSVMUN5132T1G Datasheet |
| In Stock | 929 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
NSVMUN5132T1GOSDKR 2156-NSVMUN5132T1G-OS NSVMUN5132T1GOSTR ONSONSNSVMUN5132T1G NSVMUN5132T1GOSCT NSVMUN5132T1G-ND |
| Maximum Collector Current (IC): | .1 A |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Transistor Element Material: | SILICON |
| Sub-Category: | BIP General Purpose Small Signal |
| Polarity or Channel Type: | PNP |
| Surface Mount: | YES |
| Minimum DC Current Gain (hFE): | 15 |
| Terminal Finish: | MATTE TIN |
| JESD-609 Code: | e3 |
| Maximum Power Dissipation (Abs): | .31 W |
| Maximum Collector-Emitter Voltage: | 50 V |
| Package Style (Meter): | SMALL OUTLINE |
| No. of Elements: | 1 |
| Peak Reflow Temperature (C): | 260 |
| Moisture Sensitivity Level (MSL): | 1 |









