Onsemi - NSVMUN5212DW1T1G

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NSVMUN5212DW1T1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NSVMUN5212DW1T1G
Description NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .256 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 60; Moisture Sensitivity Level (MSL): 1;
Datasheet NSVMUN5212DW1T1G Datasheet
In Stock1,064
NAME DESCRIPTION
Other Names: NSVMUN5212DW1T1G-ND
NSVMUN5212DW1T1GOSTR
NSVMUN5212DW1T1GOSDKR
NSVMUN5212DW1T1GOSCT
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): 30
Transistor Element Material: SILICON
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 60
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): .256 W
No. of Elements: 2
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
1,064 $0.040 $42.560

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