NSVMUN5336DW1T1G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NSVMUN5336DW1T1G
Description	NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .385 W; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;
Datasheet	NSVMUN5336DW1T1G Datasheet
In Stock	1,308

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.1 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material:	SILICON
Polarity or Channel Type:	NPN AND PNP
Surface Mount:	YES
Minimum DC Current Gain (hFE):	80
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	6
Maximum Power Dissipation (Abs):	.385 W
Maximum Collector-Emitter Voltage:	50 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Additional Features:	BUILT IN BAIS RESISTOR RATIO IS 1
Maximum Operating Temperature:	150 Cel
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	.25 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,308	$0.038	$49.704

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