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Manufacturer | Onsemi |
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Manufacturer's Part Number | NSVS1001SHT1G |
Description | PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 3.5 W; Maximum Collector Current (IC): 3 A; |
Datasheet | NSVS1001SHT1G Datasheet |
In Stock | 152 |
NAME | DESCRIPTION |
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Nominal Transition Frequency (fT): | 300 MHz |
Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | 3 A |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Transistor Application: | SWITCHING |
Surface Mount: | YES |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 3.5 W |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-F3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Maximum Operating Temperature: | 175 Cel |
Case Connection: | COLLECTOR |
Maximum Power Dissipation Ambient: | 1.5 W |
Polarity or Channel Type: | PNP |
Minimum DC Current Gain (hFE): | 150 |
Maximum Collector-Emitter Voltage: | 100 V |
Maximum Collector-Base Capacitance: | 26 pF |
Reference Standard: | AEC-Q101 |
Peak Reflow Temperature (C): | NOT SPECIFIED |
Maximum VCEsat: | .5 V |