Onsemi - NSVS1001SHT1G

NSVS1001SHT1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NSVS1001SHT1G
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 3.5 W; Maximum Collector Current (IC): 3 A;
Datasheet NSVS1001SHT1G Datasheet
In Stock152
NAME DESCRIPTION
Nominal Transition Frequency (fT): 300 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 3 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Surface Mount: YES
No. of Terminals: 3
Maximum Power Dissipation (Abs): 3.5 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
Maximum Power Dissipation Ambient: 1.5 W
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 150
Maximum Collector-Emitter Voltage: 100 V
Maximum Collector-Base Capacitance: 26 pF
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: .5 V
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