NSVS1001SLT4G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NSVS1001SLT4G
Description	PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 18 W; Maximum Collector Current (IC): 2.5 A;
Datasheet	NSVS1001SLT4G Datasheet
In Stock	1,107

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	300 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	2.5 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Surface Mount:	YES
No. of Terminals:	2
Maximum Power Dissipation (Abs):	18 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	175 Cel
Case Connection:	COLLECTOR
Maximum Power Dissipation Ambient:	1.2 W
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	100
Maximum Collector-Emitter Voltage:	100 V
Maximum Collector-Base Capacitance:	27 pF
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	.8 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,107	-	-

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