NSVUMZ1NT1G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NSVUMZ1NT1G
Description	NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 114 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .2 A;
Datasheet	NSVUMZ1NT1G Datasheet
In Stock	1,765

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	114 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.2 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SEPARATE, 2 ELEMENTS
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	6
Maximum Power Dissipation (Abs):	.25 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	NPN AND PNP
Minimum DC Current Gain (hFE):	200
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Maximum Collector-Emitter Voltage:	50 V
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	260
Maximum VCEsat:	.25 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,765	$0.180	$317.700

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