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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NTC160N120SC1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 119 W; Minimum DS Breakdown Voltage: 1200 V; Avalanche Energy Rating (EAS): 128 mJ; |
| Datasheet | NTC160N120SC1 Datasheet |
| In Stock | 1,782 |
| NAME | DESCRIPTION |
|---|---|
| Avalanche Energy Rating (EAS): | 128 mJ |
| Package Body Material: | UNSPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON CARBIDE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Feedback Capacitance (Crss): | 5 pF |
| Maximum Drain Current (ID): | 17 A |
| Maximum Pulsed Drain Current (IDM): | 69 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Minimum Operating Temperature: | -55 Cel |
| No. of Terminals: | 3 |
| Minimum DS Breakdown Voltage: | 1200 V |
| Maximum Power Dissipation (Abs): | 119 W |
| Terminal Position: | UPPER |
| Package Style (Meter): | UNCASED CHIP |
| JESD-30 Code: | R-XUUC-N3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain-Source On Resistance: | .224 ohm |
