Onsemi - NTGS3433T1

NTGS3433T1 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTGS3433T1
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Minimum DS Breakdown Voltage: 12 V; Moisture Sensitivity Level (MSL): 1;
Datasheet NTGS3433T1 Datasheet
In Stock255
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 60 ns
Maximum Drain Current (ID): 2.35 A
Maximum Pulsed Drain Current (IDM): 20 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 6
Maximum Power Dissipation (Abs): 1 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 235 ns
JESD-30 Code: R-PDSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .075 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 200 pF
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e0
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 12 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 1.65 A
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Pricing (USD)

Qty. Unit Price Ext. Price
255 $0.078 $19.890

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