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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NTHD2102PT1G |
| Description | P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Maximum Drain-Source On Resistance: .058 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
| Datasheet | NTHD2102PT1G Datasheet |
| In Stock | 276 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 3.4 A |
| Maximum Pulsed Drain Current (IDM): | 4.6 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 8 |
| Maximum Power Dissipation (Abs): | 2.1 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-XDSO-C8 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | C BEND |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Drain-Source On Resistance: | .058 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 8 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 3.4 A |
| Peak Reflow Temperature (C): | 260 |
