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Manufacturer | Onsemi |
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Manufacturer's Part Number | NTHD3102CT1 |
Description | N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Maximum Drain Current (ID): 4.4 A; Minimum DS Breakdown Voltage: 20 V; |
Datasheet | NTHD3102CT1 Datasheet |
In Stock | 2,003 |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 4.4 A |
Maximum Pulsed Drain Current (IDM): | 18 A |
Polarity or Channel Type: | N-CHANNEL AND P-CHANNEL |
Surface Mount: | YES |
Terminal Finish: | TIN LEAD |
JESD-609 Code: | e0 |
No. of Terminals: | 8 |
Minimum DS Breakdown Voltage: | 20 V |
Qualification: | Not Qualified |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-XDSO-C8 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | C BEND |
Operating Mode: | ENHANCEMENT MODE |
Maximum Drain-Source On Resistance: | .038 ohm |