Onsemi - NTHD5904NT3

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NTHD5904NT3 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTHD5904NT3
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.13 W; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON;
Datasheet NTHD5904NT3 Datasheet
In Stock1,315
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 2.5 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 8
Maximum Power Dissipation (Abs): 1.13 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-XDSO-C8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: C BEND
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .065 ohm
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 3.3 A
Peak Reflow Temperature (C): 235
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