Onsemi - NTHS4501NT1

  1. Home
  2. Onsemi - NTHS4501NT1
NTHS4501NT1 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number NTHS4501NT1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
Datasheet NTHS4501NT1 Datasheet
In Stock1,669
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4.9 A
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-XDSO-C8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: C BEND
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .038 ohm
Moisture Sensitivity Level (MSL): 1
Other Names: 2156-NTHS4501NT1-ONTR
ONSONSNTHS4501NT1
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE
Peak Reflow Temperature (C): 235
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,669 $0.141 $235.329

Popular Products

Category Top Products

NTR5103NT1G by Onsemi

NTR5103NT1G

Onsemi

NTR5103NT1G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 0.26A drain current, and 2.5 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.42W at 150°C.
2N7002,215 by NXP Semiconductors

2N7002,215

NXP Semiconductors

2N7002,215 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V and max drain current of 0.3A. It is used for switching applications in enhancement mode, operates b/w -65 to 150 °C, and has a max power dissipation of 0.2W.
DN3135K1-G by Microchip Technology

DN3135K1-G

Microchip Technology

DN3135K1-G by Microchip Technology is a N-CHANNEL FET for SWITCHING applications. It has a 350V DS Breakdown Voltage, 0.36W Power Dissipation, and -55 to 150°C Operating Temperature range. The package is RECTANGULAR with GULL WING terminals in SMALL OUTLINE style.
2N7002K-T1-GE3 by Vishay Intertechnology

2N7002K-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's 2N7002K-T1-GE3 is a N-channel FET with 60V breakdown voltage, ideal for switching applications. It features single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.3A and on-resistance of 4 ohm, it offers reliable performance in small outline packages.
SI2300DS-T1-GE3 by Vishay Intertechnology

SI2300DS-T1-GE3

Vishay Intertechnology

SI2300DS-T1-GE3 by Vishay Intertechnology is a N-channel FET with 30V DS breakdown voltage and 3.6A max drain current. Ideal for switching applications, it operates in enhancement mode with a built-in diode, offering 0.068 ohm max on-resistance and 19pF feedback capacitance.
BSS138PS,115 by NXP Semiconductors

BSS138PS,115

NXP Semiconductors

NXP Semiconductors' BSS138PS,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A max drain current. Ideal for switching applications, it features a 1.6 ohm max on-resistance and operates in enhancement mode. The transistor comes in a small outline package with GULL WING terminals, making it suitable for surface mount designs.
FDC5614P_NL by Fairchild Semiconductor

FDC5614P_NL

Fairchild Semiconductor

FDC5614P_NL by Fairchild Semiconductor is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 3A Drain Current, 0.105 ohm On Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and SMALL OUTLINE package style, it can handle up to 1.6W power dissipation at temperatures ranging from -55 to 150°C.
2N7000 by Lite-on Semiconductor

2N7000

Lite-on Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
ZXMN6A07FTA by Zetex Plc

ZXMN6A07FTA

Zetex Plc

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .806 W; Terminal Finish: Matte Tin (Sn); JESD-30 Code: R-PDSO-G3;
FDN302P by Onsemi

FDN302P

Onsemi

FDN302P by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 2.4A and 0.055 ohm Drain-Source Resistance, operating in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C.
MMBF170LT1G by Rochester Electronics

MMBF170LT1G

Rochester Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 3;
SI1553CDL-T1-GE3 by Vishay Intertechnology

SI1553CDL-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI1553CDL-T1-GE3 is a Small Signal FET with N/P-channel, 2 elements, and built-in diode. Ideal for switching applications, it operates in enhancement mode with max drain current of 0.7A and on-resistance of 0.39 ohm. With a temp range of -55 to 150°C, this MOSFET has a peak reflow temp of 260°C and feedback capacitance of 6pF.
FDS4685 by Onsemi

FDS4685

Onsemi

FDS4685 by Onsemi is a P-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 8.2A and an Operating Temperature up to 150°C. With a small outline package style and surface mount capability, it offers high performance in compact designs.
NTR4502PT1G by Onsemi

NTR4502PT1G

Onsemi

NTR4502PT1G by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, ideal for SWITCHING applications. It features single configuration with built-in diode, 1.95A max drain current, and 0.2 ohm max on resistance. Operating in enhancement mode, it has a max power dissipation of 0.4W and can withstand temperatures up to 150°C.
NDS0605 by Fairchild Semiconductor

NDS0605

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified;
SI2308BDS-T1-GE3 by Vishay Intertechnology

SI2308BDS-T1-GE3

Vishay Intertechnology

SI2308BDS-T1-GE3 by Vishay Intertechnology is a N-channel FET with 60V DS breakdown voltage and 2.3A max drain current, ideal for switching applications. It operates in enhancement mode with a max power dissipation of 1.66W at 150°C, featuring a small outline package style for surface mount assembly.
MMBF4117 by Onsemi

MMBF4117

Onsemi

MMBF4117 by Onsemi is a N-CHANNEL FET in PLASTIC/EPOXY package, ideal for SWITCHING applications. With 3 terminals and 0.225W power dissipation, it operates in DEPLETION MODE at up to 150°C. Featuring GULL WING terminals and 1.5pF feedback capacitance, it's a versatile choice for small outline surface mount designs.
BS170FTA by Zetex Plc

BS170FTA

Zetex Plc

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 60 V;
FDS6681Z by Fairchild Semiconductor

FDS6681Z

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
MMBFJ113 by National Semiconductor

MMBFJ113

National Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Qualification: Not Qualified; No. of Terminals: 3;