Onsemi - NTLJD2104PTAG

NTLJD2104PTAG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTLJD2104PTAG
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; Terminal Form: NO LEAD; JESD-30 Code: S-PDSO-N6;
Datasheet NTLJD2104PTAG Datasheet
In Stock1,742
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 2.4 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Maximum Power Dissipation (Abs): 2.3 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N6
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .12 ohm
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 12 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 3.5 A
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
1,742 $0.249 $433.758

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