Onsemi - NTLJD4150P

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NTLJD4150P by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTLJD4150P
Description P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; Maximum Drain Current (Abs) (ID): 3.4 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 3.4 A;
Datasheet NTLJD4150P Datasheet
In Stock2,339
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 2.3 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 3.4 A
Maximum Drain Current (Abs) (ID): 3.4 A
Sub-Category: Other Transistors
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
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Pricing (USD)

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