
Image shown is a representation only.
Manufacturer | Onsemi |
---|---|
Manufacturer's Part Number | NTLJS4149PTBG |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.2 W; Minimum Operating Temperature: -55 Cel; No. of Terminals: 6; |
Datasheet | NTLJS4149PTBG Datasheet |
In Stock | 1,975 |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 2.7 A |
Sub-Category: | Other Transistors |
Surface Mount: | YES |
Terminal Finish: | TIN |
No. of Terminals: | 6 |
Maximum Power Dissipation (Abs): | 3.2 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | S-PDSO-N6 |
No. of Elements: | 1 |
Package Shape: | SQUARE |
Terminal Form: | NO LEAD |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .062 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Polarity or Channel Type: | P-CHANNEL |
JESD-609 Code: | e3 |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 30 V |
Qualification: | Not Qualified |
Maximum Drain Current (Abs) (ID): | 4.5 A |
Peak Reflow Temperature (C): | 260 |