Onsemi - NTLUD3C20CZTAG

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NTLUD3C20CZTAG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTLUD3C20CZTAG
Description N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Package Shape: SQUARE; Package Style (Meter): SMALL OUTLINE;
Datasheet NTLUD3C20CZTAG Datasheet
In Stock227
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 6.4 A
Maximum Pulsed Drain Current (IDM): 21 A
Surface Mount: YES
No. of Terminals: 6
Maximum Power Dissipation (Abs): 1.4 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N6
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .023 ohm
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 12 V
Maximum Drain Current (Abs) (ID): 6.4 A
Peak Reflow Temperature (C): NOT SPECIFIED
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