Onsemi - NTMC083NP10M5L

  1. Home
  2. Onsemi - NTMC083NP10M5L
NTMC083NP10M5L by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number NTMC083NP10M5L
Description N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Maximum Drain-Source On Resistance: .083 ohm; Maximum Drain Current (ID): 4.1 A;
Datasheet NTMC083NP10M5L Datasheet
In Stock13,237
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4.1 A
Maximum Pulsed Drain Current (IDM): 20 A
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 3.1 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .083 ohm
Avalanche Energy Rating (EAS): 18 mJ
Maximum Feedback Capacitance (Crss): 2.6 pF
JEDEC-95 Code: MS-012AA
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
13,237 - -

Popular Products

Category Top Products

FQB34P10TM by Fairchild Semiconductor

FQB34P10TM

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 155 W; Maximum Pulsed Drain Current (IDM): 134 A; Maximum Drain-Source On Resistance: .06 ohm;
IRFR4620TRLPBF by International Rectifier

IRFR4620TRLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 144 W; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier;
FDS4935A by Onsemi

FDS4935A

Onsemi

FDS4935A by Onsemi is a P-CHANNEL power FET with a min DS breakdown voltage of 30V. It has a max drain current of 7A and a max drain-source on resistance of 0.023 ohm. This transistor is commonly used for switching applications in various electronic devices.
IRF6215STRLPBF by Infineon Technologies

IRF6215STRLPBF

Infineon Technologies

IRF6215STRLPBF by Infineon Technologies is a P-CHANNEL FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 44A and EAS of 310mJ, with an operating temperature up to 175°C. This SINGLE configuration transistor has 0.29 ohm RDS(on) and can handle a max ID of 13A.
IRF540NSTRRPBF by International Rectifier

IRF540NSTRRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: GULL WING;
FDD4685 by Fairchild Semiconductor

FDD4685

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 69 W; Maximum Operating Temperature: 150 Cel; Maximum Feedback Capacitance (Crss): 205 pF;
ZXMP6A13GTA by Diodes Incorporated

ZXMP6A13GTA

Diodes Incorporated

ZXMP6A13GTA by Diodes Inc. is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max drain current of 2.3A.
JANTX2N6796 by Intersil

JANTX2N6796

Intersil

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Terminal Position: BOTTOM; Maximum Drain Current (Abs) (ID): 8 A;
IRF7425TRPBF by International Rectifier

IRF7425TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN;
NVF2955T1G by Onsemi

NVF2955T1G

Onsemi

The Onsemi NVF2955T1G is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 17A and EAS of 225mJ, operating in ENHANCEMENT MODE. With a compact SMALL OUTLINE package and 0.185 ohm RDS(on), it offers efficient power dissipation up to 2.3W at 175°C.
IRF7404TRPBF by Infineon Technologies

IRF7404TRPBF

Infineon Technologies

IRF7404TRPBF by Infineon is a P-CHANNEL FET with 20V DS Breakdown Voltage and 27A IDM. Ideal for power applications, it features a single configuration with built-in diode, small outline package style, and -55 to 150 °C operating temperature range.
ZVN2110GTA by Zetex Plc

ZVN2110GTA

Zetex Plc

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Finish: Matte Tin (Sn); Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SQJ402EP-T1_GE3 by Vishay Intertechnology

SQJ402EP-T1_GE3

Vishay Intertechnology

Vishay Intertechnology's SQJ402EP-T1_GE3 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 32A ID. Ideal for applications requiring high current handling, such as power supplies or motor control systems. Features include 48mJ EAS rating, -55 to 175 °C operating temp range, and 0.011 ohm Drain-Source On Resistance.
BS170 by Telcom Semiconductor

BS170

Telcom Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e0; Maximum Drain Current (ID): .5 A;
FQT7N10LTF by Onsemi

FQT7N10LTF

Onsemi

FQT7N10LTF by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It has a Max IDM of 6.8A and EAS of 50mJ, suitable for SWITCHING applications. This SINGLE transistor in PLASTIC/EPOXY package operates in ENHANCEMENT MODE at up to 150°C, with 0.38 ohm RDS(on) and 2W Pdiss.
IRF640 by Motorola

IRF640

Motorola

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Terminal Position: SINGLE; No. of Terminals: 3;
IRLML5203TRPBF by Infineon Technologies

IRLML5203TRPBF

Infineon Technologies

Infineon's IRLML5203TRPBF is a P-CHANNEL FET for SWITCHING applications. Features include 30V DS Breakdown Voltage, 24A IDM, and 0.098 ohm RDS(on). With a small outline package style and -55 to 150 °C operating range, it's ideal for power management in various electronic devices.
IRF740APBF by Vishay Siliconix

IRF740APBF

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Finish: MATTE TIN; No. of Terminals: 3; Avalanche Energy Rating (EAS): 630 mJ;
FQT4N20LTF by Fairchild Semiconductor

FQT4N20LTF

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; JESD-30 Code: R-PDSO-G4; Moisture Sensitivity Level (MSL): 1;
IRFZ44NS by International Rectifier Hirel Products

IRFZ44NS

International Rectifier Hirel Products

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON; Terminal Position: SINGLE;