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Manufacturer | Onsemi |
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Manufacturer's Part Number | NTMD4102PR2G |
Description | P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Application: SWITCHING; Terminal Position: DUAL; |
Datasheet | NTMD4102PR2G Datasheet |
In Stock | 339 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 6.5 A |
Maximum Pulsed Drain Current (IDM): | 30 A |
Polarity or Channel Type: | P-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 8 |
Minimum DS Breakdown Voltage: | 20 V |
Qualification: | Not Qualified |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G8 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Peak Reflow Temperature (C): | NOT SPECIFIED |
Maximum Drain-Source On Resistance: | .019 ohm |